Effect of aging on radiation response of bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2164-2169

  Pershenkov, V S ^a,b   Slesarev, A Y ^b   Sogoyan, A V ^b   Belyakov, V V ^a,b   Kekukh, V B ^b   Bashin, A Y ^b   Ivashin, D V ^b   Motchkine, V S ^b   Ulimov, V N ^c   Emelianov, V V ^c  

^a IEEE   (Russian Federation)

^b NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^c RESEARCH INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Russian Federation)

Author keywords

Aging; Base current; Bipolar transistor; Infrared illumination; Radiation response; Temperature stress; X ray irradiation

Indexed keywords

X-RAY IRRADIATION;

AGING OF MATERIALS; ANNEALING; ELECTRON TRAPS; HIGH TEMPERATURE EFFECTS; INFRARED RADIATION; IRRADIATION; MATHEMATICAL MODELS; RADIATION EFFECTS; THERMAL STRESS; X RAYS;

BIPOLAR TRANSISTORS;

EID: 0035720529     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983190     Document Type: Conference Paper

References (10)

1. Effects of burn-in on radiation hardness
2. Effects of reliability screens on radiation hardness
3. Impact of aging on radiation hardness
4. Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs
5. Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits
6. Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation
7. The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices
8. Comparison of ionizing-radiation-induced gain degradation in lateral, substrate and vertical PNP BJTs
9. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
10. Thermal- and radiation-induced interface traps in MOS devices