Charge Collection Measurements on GaAs Devices Fabricated on Semi-Insulating Substrates

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1116-1120

  Hookins, M A ^b   Srour, J R ^b  

^a AEROSPACE CORPORATION   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

CHARGE COLLECTION MEASUREMENTS; SEMI-INSULATING GALLIUM ARSENIDE; SINGLE-EVENT UPSETS;

SEMICONDUCTOR DEVICES;

EID: 0021580681     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333466     Document Type: Article

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