Particle-Induced Mitigation of SEU Sensitivity in High Data Rate GaAs HIGFET Technologies

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1844-1849

  Marshall, Paul W ^a   Dale, Cheryl J ^a   Weatherford, Todd R ^b   Macchia, Michael La ^c   LaBel, Kenneth A ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c MOTOROLA INC   (United States)

^d NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; HETEROJUNCTIONS; LOGIC DEVICES; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

CHARGE ENHANCEMENT; PARTICLE INDUCED MITIGATION; SINGLE EVENT UPSET (EU);

FIELD EFFECT TRANSISTORS;

EID: 0029491679     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489225     Document Type: Article

References (14)

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