EFFECTS OF A BURIED P-LAYER ON ALPHA-PARTICLE IMMUNITY OF MESFETS FABRICATED ON SEMI-INSULATING GaAs SUBSTRATES.

Electron device letters

Volumn EDL-7, Issue 6, 1986, Pages 396-397

  Umemoto, Y ^a   Masuda, N ^a   Mitsusada, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE - SUBSTRATES;

ALPHA-PARTICLE IMMUNITY; ALPHA-PARTICLE-INDUCED CHARGE; BURIED P-LAYERS; MESFETS; SEMI-INSULATING GALLIUM ARSENIDE;

TRANSISTORS, FIELD EFFECT;

EID: 0022738646     PISSN: 01938576     EISSN: None     Source Type: Journal    
DOI: 10.1109/edl.1986.26412     Document Type: Article

References (9)