Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 1995, Pages 373-378

  McMorrow, Dale ^a   Weatherford, Todd R ^a   Knudson, Alvin R ^a   Buchner, Steve ^a   Melinger, Joseph S ^a   Tran, Lan Hu ^a   Campbell, A B ^a   Marshall, Paul W ^a   Dale, Cheryl J ^a   Peczalski, Andrej ^a   Baier, Steve ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; IONS; IRRADIATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS;

CHANNEL MODULATION EFFECT; HETEROJUNCTION INSULATED GATE FIELD EFFECT TRANSISTORS; ION IRRADIATION; TIME INTEGRATED CHARGE COLLECTION MEASUREMENT; TIME RESOLVED INTEGRATED CHARGE COLLECTION MEASUREMENT;

FIELD EFFECT TRANSISTORS;

EID: 0029453734     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)