SEU of Complementary GaAs Static Rams Due to Heavy Ions

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1121-1123

  Nichols, D K ^b   Notthoff, J K ^a  

^a BOEING COMPANY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, SEMICONDUCTOR - STORAGE DEVICES; IONS; OXYGEN; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

LINEAR ENERGY TRANSFER THRESHOLD; OXYGEN IONS; SINGLE-EVENT UPSETS; STATIC RAMS;

DATA STORAGE, DIGITAL;

EID: 0021586531     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333467     Document Type: Article

References (8)

1. G. L. Troeger and J. K. Notthoff. “A radiation hard, low-power GaAs static RAM using E-JFET DCFL,” GaAs IC Symp. Tech. Digest, Paper 20 (1983).
2. S. J. Lee, et al. “Ultra-low power, high-speed GaAs 256-bit static RAM,” GaAs IC Symp. Tech. Digest, 74 (1983).
3. R. Zuleeg, et al. “Double-implanted GaAs complementary JFETs,” IEEE Electron Device Letters, EDL-5, 21 (1984).
4. D. K. Nichols, et al. “Single event upset (SEU) of semiconductor devices - A summary of JPL test data,” IEEE Trans. Nucl. Sci., NS-30, 4520 (Dec. 1983).
5. E. L. Petersen, et al. “Suggested single event upset figure of merit,” IEEE Trans. Nucl. Sci., NS-30, 4533 (1983).
6. M. A. Hopkins and J. R. Srour. “Measurements of alpha-particle-induced charge in GaAs devices,” IEEE Trans. Nucl. Sci., NS-30, 4457 (Dec. 1983).
7. M. A. Hopkins, private communication.
8. S. E. Diehl et al. “Considerations for single event immune VLSI logic,” IEEE Trans. Nucl. Sci., NS-30, 4501 (Dec. 1983).