Reduction of Sidegating in GaAs Analog and Digital Circuits using a new buffer layer

IEEE Transactions on Electron Devices

Volumn 36, Issue 9, 1989, Pages 1546-1556

  Chen, Chang Lee ^a   Smith, Frank W ^a   Calawa, Arthur R ^a   Mahoney, Leonard J ^a   Manfra, Michael J ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, DIGITAL; INTEGRATED CIRCUITS, MONOLITHIC--MICROWAVES; MOLECULAR BEAM EPITAXY; TRANSISTORS, FIELD EFFECT;

BUFFER LAYER; MESFET INTEGRATED CIRCUITS; SIDEGATING EFFECTS;

INTEGRATED CIRCUITS;

EID: 0024732877     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.34211     Document Type: Article

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