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1
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0023560373
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Laser Simultion of Single Event Upsets
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S.P. Buchner, D. Wilson, K. Kang, D. Gill, J.A. Mazer, W.D. Raburn, A.B. Campbell, and A.R. Knudson, “Laser Simultion of Single Event Upsets,” IEEE Trans. Nucl. Sci., NS-34, 1228 (1987).
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Buchner, S.P.1
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Mazer, J.A.5
Raburn, W.D.6
Campbell, A.B.7
Knudson, A.R.8
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2
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0018552951
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Heavy-Ion Track Structure in Silicon
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R.N. Hamm, J.E. Turner, H.A. Wright, and R.H. Ritchie, “Heavy-Ion Track Structure in Silicon,” IEEE Trans. Nucl. Sci., NS-26, 4892 (1979).
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Hamm, R.N.1
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Nonequilibrium Radiation Effects In VLSI
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J. Bradford, “Nonequilibrium Radiation Effects In VLSI,” IEEE Trans Nucl. Sci., NS-25, 1144 (1978).
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IEEE Trans Nucl. Sci.
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Bradford, J.1
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4
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Alpha, Boron, Silicon Ion-Induced Current Transients in Low-Capacitance Silicon and GaAs Diodes
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R.S. Wagner, N. Bordes, J.M. Bradley, C.J. Maggiore, A.R. Knudson, and A.B. Campbell, “Alpha, Boron, Silicon Ion-Induced Current Transients in Low-Capacitance Silicon and GaAs Diodes,” IEEE Trans. Nucl. Sci., NS-35 (1988).
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IEEE Trans. Nucl. Sci.
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Wagner, R.S.1
Bordes, N.2
Bradley, J.M.3
Maggiore, C.J.4
Knudson, A.R.5
Campbell, A.B.6
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5
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55249089626
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Charge Funneling in n and p-Type Si Substrates
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F.B. McLean and T.R. Oldham, “Charge Funneling in n and p-Type Si Substrates,” IEEE Trans. Nucl. Sci., NS-29, 2018 (1982).
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McLean, F.B.1
Oldham, T.R.2
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6
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0021615545
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Charge Collection in Multilayer layer Structures
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A.R. Knudson, A.B. Campbell, P. Shapiro, W.J. Stapor, E.A. Wolicki, E.L. Petersen, S.E. Diehl-Nagle, J. Hauser, and P.V. Dressendorfer, “Charge Collection in Multilayer layer Structures,” IEEE Trans. Nucl. Sci., NS-31, 1149 (1984).
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IEEE Trans. Nucl. Sci.
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Knudson, A.R.1
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Stapor, W.J.4
Wolicki, E.A.5
Petersen, E.L.6
Diehl-Nagle, S.E.7
Hauser, J.8
Dressendorfer, P.V.9
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7
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0022188818
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Ion Track Shunt Effects in Multi-Junction Structures
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J.R. Hauser, S.E. Diehl-Nagle, A.R. Knudson, A.B. Campbell, W.J. Stapor, and P. Shapiro, “Ion Track Shunt Effects in Multi-Junction Structures,” IEEE Trans. Nucl. Sci., NS-32, 4115 (1985).
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(1985)
IEEE Trans. Nucl. Sci.
, vol.NS-32
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Hauser, J.R.1
Diehl-Nagle, S.E.2
Knudson, A.R.3
Campbell, A.B.4
Stapor, W.J.5
Shapiro, P.6
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8
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0022865246
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Charge Transport by the Ion Shunt Effect
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A.R. Knudson, A.B. Campbell, J.R. Hauser, M. Jessee, W.J. Stapor, and P. Shapiro, “Charge Transport by the Ion Shunt Effect,” IEEE Trans. Nucl. Sci. NS-33, 1560 (1986).
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(1986)
IEEE Trans. Nucl. Sci.
, vol.NS-33
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Knudson, A.R.1
Campbell, A.B.2
Hauser, J.R.3
Jessee, M.4
Stapor, W.J.5
Shapiro, P.6
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9
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0023535724
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Charge Collection in Bipolar Transistors
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A.R. Knudson and A.B. Campbell, “Charge Collection in Bipolar Transistors,” IEEE Trans. Nucl. Sci., NS-34, 1246 (1987).
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(1987)
IEEE Trans. Nucl. Sci.
, vol.NS-34
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Knudson, A.R.1
Campbell, A.B.2
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10
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0021594456
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Two-Dimensional Simulation of Single Event Bipolar Current in CMOS Structures
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J.S. Fu, C.L. Axness, and H.T. Weaver, “Two-Dimensional Simulation of Single Event Bipolar Current in CMOS Structures,” IEEE Trans. Nucl. Sci. NS-31, 1155 (1984).
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IEEE Trans. Nucl. Sci.
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Fu, J.S.1
Axness, C.L.2
Weaver, H.T.3
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11
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0019702346
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Use of an Ion Microbeam to Study SEU in Microcircuits
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A.R. Knudson and A.B. Campbell, “Use of an Ion Microbeam to Study SEU in Microcircuits,” IEEE Trans. Nucl. Sci., NS-28, 4017 (1981).
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(1981)
IEEE Trans. Nucl. Sci.
, vol.NS-28
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Knudson, A.R.1
Campbell, A.B.2
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