Two and Three Terminal Gallium Arsenide FET Optical Detectors

IEEE Electron Device Letters

Volumn 1, Issue 8, 1980, Pages 149-150

  Edwards, W D ^a  

^a Industry Canada   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

OPTICAL INSTRUMENTS;

EID: 0019051143     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1980.25268     Document Type: Article

References (7)

1. C. Baack, S. Elze and G. Waif, “GaAs MESFET high-speed optical detector,” Electronics Letters, 1977, 13, p. 193.
2. J. M. Osterwalder and B. J. Rickett, “GaAs MESFET demodulates gigabit signal rates from GaAlAs injection laser,” Proc. IEEE, 1979, 67, pp. 966–968.
3. J. Pan, “GaAs MESFET for high speed optical detection,” Spie International Technical Symposium, San Diego, Calif., 1978.
4. J. Gammel and J. M. Ballantyne, “The OPFET, a new high speed optical detector,” Electron Devices Meeting, Washington, 1978, pp. 120–123.
5. J. Graffeuil, P. Rossel and H. Martinot, “Light induced effects in GaAs FETs,” Electronics Letters, 1979, 15, pp, 439–440.
6. W. D. Edwards, “The use of laser and infrared scanning techniques in reliability assurance,” Microelectronics & Reliability, 1979, 18, pp. 511–522.
7. R. H. Haythornthwaite, Private communication, to be published.