Picosecond carrier lifetime in GaAs implanted with high doses of As ions: an alternative material to low-temperature GaAs for optoelectronic applications

Applied Physics Letters

Volumn 66, Issue 24, 1995, Pages 3304-3306

  Krotkus, A ^a   Marcinkevicius, S ^a   Jasinski, J ^a   Kaminska, M ^a   Tan, H H ^a   Jagadish, C ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; HALL EFFECT; ION IMPLANTATION; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMAL EFFECTS;

CARRIER HOPPING; CARRIER LIFETIME; HALL MOBILITY; NONRADIATIVE RECOMBINATION CENTERS; RUTHERFORD BACKSCATTERING CHANNELING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029323727     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.113738     Document Type: Article

References (13)