Intrinsic seu reduction from use of heterojunctions in gallium arsenide bipolar circuits

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1676-1679

  Salzman, James F ^a   McNulty, Peter J ^b   Knudson, A R ^c  

^a TEXAS INSTRUMENTS   (United States)

^b CLARKSON UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11744384280     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337535     Document Type: Article

References (10)

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6. H.T. Yuan, private communication.
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