Radiation Effects in GaAs FET Devices

Proceedings of the IEEE

Volumn 77, Issue 3, 1989, Pages 389-407

  Zuleeg, Rainer ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, DIGITAL; NEUTRONS; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE--RADIATION EFFECTS;

ALPHA PARTICLES; GALLIUM ARSENIDE FET DEVICES; IONIZING RADIATION; NEUTRON EFFECTS;

TRANSISTORS, FIELD EFFECT;

EID: 0024627172     PISSN: 00189219     EISSN: 15582256     Source Type: Journal    
DOI: 10.1109/5.24126     Document Type: Article

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