High speed response of a GaAs metal-semiconductor field-effect transistor to electron-beam excitation

Journal of Applied Physics

Volumn 53, Issue 5, 1982, Pages 3873-3877

  Flesner, L D ^a   Davis, N M ^a   Wieder, H H ^a  

^a Naval Command   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

MESFETS;

TRANSISTORS, FIELD EFFECT;

EID: 0020126710     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.331087     Document Type: Article

References (13)