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Volumn 30, Issue 6, 1983, Pages 4457-4463

Measurements of alpha-particle-induced charge in gaas devices

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0020904492     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333154     Document Type: Article
Times cited : (31)

References (37)
  • 9
  • 10
    • 84939030578 scopus 로고    scopus 로고
    • Klein1l gives a value of 4.8 eV for the average electron-hole pair generation energy in GaAs. Wu and Wittry12 determined this energy to be 4.68 ± 0.14 eV. A value of 5.0 eV is assumed by Zuleeg and Lehovec.1
    • Klein1l gives a value of 4.8 eV for the average electron-hole pair generation energy in GaAs. Wu and Wittry12 determined this energy to be 4.68 ± 0.14 eV. A value of 5.0 eV is assumed by Zuleeg and Lehovec.1
  • 22
    • 36149046194 scopus 로고
    • A. Haug, J. Phys. C16, 4159 (1983).
    • (1983) J. Phys , vol.C16 , pp. 4159
    • Haug, A.1
  • 23
    • 84879462832 scopus 로고
    • See and references therein.
    • See J.N. Bradford, IEEE Trans. Nucl. Sci. 25, 1144 (1978) and references therein.
    • (1978) IEEE Trans. Nucl. Sci , vol.25 , pp. 1144
    • Bradford, J.N.1
  • 25
    • 0020719712 scopus 로고
    • 54, 2495 1983
    • O. von Roos, J. Appl. Phys. 54, 1390 (1983); 54, 2495 (1983).
    • (1983) Appl. Phys , vol.54 , pp. 1390
    • von, O.1    Roos, J.2
  • 36
    • 84939044810 scopus 로고    scopus 로고
    • personal communication.
    • F.B. McLean, personal communication.
    • McLean, F.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.