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Volumn 38, Issue 6, 1991, Pages 1370-1376

Charge collection in GaAs MESFETs and MODFETs

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; LASER PULSES; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026388820     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124119     Document Type: Article
Times cited : (17)

References (17)
  • 4
    • 0024666348 scopus 로고
    • A Bipolar Mechanism for Alpha-Particle-Induced Soft Errors in GaAs Integrated Circuits
    • Y. Umemoto, N. Matsunaga, and K Mitsusada, “A Bipolar Mechanism for Alpha-Particle-Induced Soft Errors in GaAs Integrated Circuits,” IEEE Trans. on Elec. Devices, 36(5), 864 (1989).
    • (1989) IEEE Trans. on Elec. Devices , vol.36 , Issue.5 , pp. 864
    • Umemoto, Y.1    Matsunaga, N.2    Mitsusada, K.3
  • 6
    • 0020908468 scopus 로고
    • Channel and Substrate Currents in GaAs FETS due to Ionizing Radiation
    • R. Zuleeg, J.K. Notthoff, and G.L. Troeger, “Channel and Substrate Currents in GaAs FETS due to Ionizing Radiation,” IEEE Trans. Nucl. Sci., NS-30, 4151 (1983).
    • (1983) IEEE Trans. Nucl. Sci. , vol.NS-30 , pp. 4151
    • Zuleeg, R.1    Notthoff, J.K.2    Troeger, G.L.3
  • 7
    • 0021596159 scopus 로고
    • Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and n+ -SI-n+ Structures
    • L.D. Flesner, “Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and n+ -SI-n+ Structures,” IEEE Trans. Nucl. Sci., NS-31, 1502 (1984).
    • (1984) IEEE Trans. Nucl. Sci. , vol.NS-31 , pp. 1502
    • Flesner, L.D.1
  • 9
    • 0022876417 scopus 로고
    • Long Term Transient Radiation Response of GaAs FET's Fabricated on an AlGaAs Buffer Layer
    • W. T. Anderson, M. Simons, and W.F. Tseng, “Long Term Transient Radiation Response of GaAs FET's Fabricated on an AlGaAs Buffer Layer,” IEEE Trans. Nucl. Sci., NS-33, 1442 (1986).
    • (1986) IEEE Trans. Nucl. Sci. , vol.NS-33 , pp. 1442
    • Anderson, W.T.1    Simons, M.2    Tseng, W.F.3
  • 11
    • 0023310853 scopus 로고
    • Buried-Channel GaAs MESFET's with Immunity to Ionizing Optical Radiation Effects
    • P. Canfield and L. Forbes, “Buried-Channel GaAs MESFET's with Immunity to Ionizing Optical Radiation Effects,” IEEE Elec. Dev. Lett. EDL-8, 113 (1987).
    • (1987) IEEE Elec. Dev. Lett. , vol.EDL-8 , pp. 113
    • Canfield, P.1    Forbes, L.2
  • 15
    • 0001520080 scopus 로고
    • Kinetics of Relaxation and Recombination of Nonequilibrium Carriers in GaAs: Carrier Capture by Impurities
    • D. Bimberg, H Muenzel, A Steckenborn, and J. Christen, “Kinetics of Relaxation and Recombination of Nonequilibrium Carriers in GaAs: Carrier Capture by Impurities,” Phys. Rev. B 31, 7788 (1985).
    • (1985) Phys. Rev. B , vol.31
    • Bimberg, D.1    Muenzel, H.2    Steckenborn, A.3    Christen, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.