RADIATION-INDUCED HOLE TRAPPING AND INTERFACE STATE CHARACTERISTICS OF Al-GATE AND POLY-Si GATE MOS CAPACITORS.

IEEE Transactions on Nuclear Science

Volumn NS-32, Issue 6, 1985, Pages

  Shanfield, Z ^a   Moriwaki, M M ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC DEVICES - GATES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, MOS - SEMICONDUCTOR INSULATOR BOUNDARIES;

HOLE TRAPS; MOS CAPACITORS;

CAPACITORS;

EID: 0022188375     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)