Proton and heavy ion upsets in GaAs MESFET devices

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1460-1466

  Abdel Kader, W G ^c   McNulty, P J ^c   Langworthy, J B ^b   McMorrow, D ^b  

^a SFA INC   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84941871063     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124131     Document Type: Article

References (20)

1. P. Shapiro, A.B. Campbell, J.C. Ritter, R. Zuleeg, and J.K. Notthoff, “Single Event Upset Measurements of GaAs E-JFET RAMs,” IEEE Trans. on Nucl. Sci. Vol. NS-30, No. 6, December 1983.
2. R. Zuleeg, J.K. Notthoff, D.K. Nichols, “SEU of Complementary GaAs Static RAMs Due to Heavy Ions,” IEEE Trans. on Nucl Sci. Vol. NS-31, No. 6, December 1984.
3. B.W. Hughlock, G.S. LaRue, and A.H. Johnston, “Single-Event Upset in GaAs E/D MESFET Logic,” IEEE Trans. on Nucl. Sci., Vol. 37, No. 6, December 1990.
4. J.F. Salzman, P.J. McNulty, and A.R. Knudson, “Intrinsic SEU Reduction from Use of Heterojunctions in Gallium Arsenide Bipolar Circuits,” IEEE Trans. on Nucl. Sci., Vol. NS-34, No. 6, December 1987.
5. T.R. Weatherford, J.R. Hauser, S.E. Diehl, “Comparisions of Single Event Vulnerability of GaAs SRAMs,” IEEE Trans. on Nucl. Sci., Vol. NS-33, No. 6, December 1986.
6. P.J. McNulty, W. Abdel-Kader, A.B. Campbell, A.R. Knudson, P. Shapiro, F. Eisen, and S.Roosild,” IEEE Trans. on Nucl. Sci., Vol. NS-31, No. 6, December 1984.
7. P.J. McNulty, W.J. Beauvais, D.R. Roth and J.E. Lynch, “Determination of SEU Parameters of CMOS SRAMs by Charge Collection Measurements on Working Devices,” to be published in this issue.
8. J.M. Golio, J.R. Hauser, and P.A. Blakey, “A Large-Signal GaAs MESFET Model Implemented on SPICE,” IEEE Circuits and Devices, September 1985, 1, 21.
9. P.J. McNulty, G.E. Farrell, W.P. Tucker, “Proton-Induced Nuclear Reactions in Silicon,” IEEE Trans. on Nucl. Sci., Vol. NS-28, No. 6, December 1981.
10. W.J.Stapor, J.P. Meyers, J.B. Langworthy, and E.L.Petersen, “Two Parameter Bendel Model Calculations for Predicting Proton Induced Upset,” IEEE Trans. on Nucl. Sci., Vol. NS-37, No. 6, December 1990.
11. W.L. Bendel and E.L. Petersen, “Proton Upsets in Orbit,” IEEE Trans. on Nucl. Sci., Vol. NS-30, No. 6, December 1983.
12. R. Zuleeg, “Radiation Effects in GaAs FET Devices,” Proc. of the IEEE, Vol. 77, No. 3, March 1989.
13. S.E. Diehl, A. Ochoa, P.V. Dressendorfer, R. Koga, and W.A. Kolasinski, “Error Analysis and Prevention of Cosmic Ion-Induced Induced Soft Errors in Static CMOS RAMs,” IEEE Trans. on Nucl. Sci., Vol. NS-29, No. 6, December 1982.
14. M.A. Hopkins and J.R. Srour, “Charge Collection Measurements on GaAs Devices Fabricated on Semi-Insulating Substrates,” IEEE Trans. on Nucl. Sci., Vol. NS-31, No. 6, December 1984.
15. S.M. Sze, “Physics of Semiconductor Devices,” John Wiley & Sons, 1981, pg. 851.
16. B.W. Hughlock, personal communication.
17. L.D. Flesner, “Gate Charge Collection and Induced Drain Current in GaAs FETs,” IEEE Trans. on Nucl. Sci., Vol. NS-32, No. 6, December 1985.
18. A.R. Knudson, A.B. Campbell, D. McMorrow, S. Buchner, K. Kang, T.R. Weatherford, V. Srinivas, G.A. Swartzlander Jr., and Y.J. Chen, “Pulsed Laser-Induced Charge Collection in GaAs MESFETs,” IEEE Trans. on Nucl. Sci., Vol. 37, No. 6, December 1990.
19. Y. Liu, R.W. Dutton, M.D. Deal, “Sidegating Effect of GaAs MESFET's and Leakage Current in a Semi-Insulating GaAs Substrate,” IEEE Elec. Dev. Let., Vol. 11, No. 11, November 1990.
20. D.C. D'Avanzo, “Proton Isolation for GaAs Integrated Circuits,” IEEE Trans. Electron Devices Vol. ED-29, No. 7, 1051 July 1982.