Single event upset measurements of gaas e-jfet rams

IEEE Transactions on Nuclear Science

Volumn 30, Issue 6, 1983, Pages 4610-4612

  Shapiro, P ^a   Campbell, A B ^a   Ritter, J C ^a   Zuleeg, R ^b   Notthoff, J K ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PROTONS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; TRANSISTORS, FIELD EFFECT;

DATA STORAGE, DIGITAL;

EID: 0020920841     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333181     Document Type: Article

References (7)

1. R. Zuleeg and K. Lehovec, “Radiation Effects in GaAs Junction Field-Effect Transistors,” IEEE Trans. Nucl. Sci. NS-27, 1343 (1980).
2. H. E. Johns and J. R. Cunningham, The Physics of Radiology, Third Edition, Springfield, IL, Charles C. Thornes, 1969, Chapter IX.
3. J. K. Notthoff and C. H. Zodelfang, “Static RAM Design in the GaAs J-FETS,” EASCON 1981 Record, IEEE Pub. 81CH 1724–3, 92 (1981).
4. G. L. Troeger and J.K. Notthoff, “A Radiation Hard Low Power GaAs Static RAM Using E-JFET DCFL,” paper No. 20, 1983 GaAs IC Symposium, Phoenix, AR.
5. A. B. Campbell, “Upsets in Error Detection and Correction Integrated Circuits,” IEEE Trans. Nucl. Sci. NS-29, 2076 (1982).
6. D. K. Nichols, W. B. Price, and J. L. Andrews, “The Dependence of Single Event Upset on Proton Energy (15–590 MeV),” IEEE Trans. Nucl. Sci. NS-29, 2081 (1982).
7. W. L. Bendel and E. L. Petersen, “Proton Upsets in Orbit,”, Paper PI-2, this conference.