0.9 V DSP blocks: a 15 ns 4K SRAM and a 45 ns 16-bit multiply/accumulator

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1994, Pages 55-58

  Hallmark, Jerry ^a   Shurboff, Carl ^a   Ooms, Bill ^a   Lucero, Rudy ^a   Abrokwah, Jon ^a   Huang, Jenn Hwa ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; DELAY CIRCUITS; DIGITAL SIGNAL PROCESSING; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); HETEROJUNCTIONS; LOGIC GATES; MULTIPLYING CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS;

BOOTH ARCHITECTURE; COMPLEMENTARY HETEROSTRUCTURE; EPITAXIAL WAFERS; GATE METAL; N CHANNEL ONLY LOGIC; OHMIC METAL CONTACTS; PASS TRANSISTORS; READ ACCESS TIME; SENSE AMPLIFIER; SRAM BIT CELL;

DIGITAL DEVICES;

EID: 0028695134     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)