Ion Induced Charge Collection in GaAs MESFETs and Its Effect on SEU Vulnerability

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1442-1449

  Hughlock, B ^a   Williams, T ^a   Johnston, A ^a   Plaag, R ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ION BEAMS; SEMICONDUCTING GALLIUM ARSENIDE;

CHARGE COLLECTION; SINGLE EVENT UPSETS;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026373080     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124130     Document Type: Article

References (8)

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2. W. Anderson, A. Knudson, F. Buot, H. Grub, J. Kreskovsky and A. Campbell, “Experimental and Theoretical Study of Alpha Particle Induced Charge Collection in GaAs FETs”, IEEE Trans. Nuc. Sci., NS-34, 1326, (1987).
3. Y. Umemoto, N.Masude, J. Shigeta, and K. Matsusada, “Improvement of Alpha-Particle-Induced Soft-Error Imunity in a GaAs SRAM by a Buried p-layer”, IEEE Trans. Elect. Dev., ED-35, 268, (1988).
4. Y. Umemoto, N. Matsumaga and K. Mitsusada, “A Bipolar Mechanism for Alpha-Particle-Induced Soft Errors in GaAs Integrated Circuits”, IEEE Trans. Elect. Dev., ED-36, 864, (19890.
5. A. Campbell, A. Knudson, D. McMorrow, W. Anderson, J. Roussos, S. Espy, S. Buchner, K. Kiang, D. Kerns, and S. Kerns, “Ion Induced Charge Collection in GaAs MESFETs”, IEEE Trans. Nuc. Sci., NS-36, 2292, (1989).
6. B. Hughlock, G. LaRue and A. Johnston, “Single-Event Upset in GaAs E/D MESFET Logic”, IEEE Trans. Nuc. Sci., NS-37, 1894, (1990).
7. D. McMorrow, A. Knudson and A. Campbell, “Fast Charge Collection in GaAs MESFETs”, IEEE Trans. Nuc. Sci., NS-37, 1902, (1990).
8. A. Knudson, A. Campbell, D. McMorrow, S. Buchner, K. Kang, T. Weatherford, V. Srinivas, G. Swartzlander Jr., and Y. Chen, “Pulsed Laser-Induced Charge Collection in GaAs MESFETs”, IEEE Trans. Nuc. Sci., NS-37, 1909, (1990).