Seu-Hardened Silicon Bipolar and Gaas Mesfet Sram Cells Using Local Redundancy Techniques

IEEE Transactions on Nuclear Science

Volumn 39, Issue 1, 1992, Pages 2-6

  Hauser, John R ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS; RADIATION DETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; TRANSISTORS, FIELD EFFECT;

LOCAL REDUNDANCY; SINGLE EVENT UPSETS;

DATA STORAGE, DIGITAL;

EID: 0026817684     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.120128     Document Type: Article

References (4)

1. J. R. Hauser, “SEU effects in bipolar RAMs,” J. Rad. Effects, Vol. 6, p. 44, 1988.
2. G. C. Messenger, O. Dukelow, J. Heller, C. T. Kleiner, and M. E. Peacock, “Hardening of bipolar memory cells against SEU,” J. Rad. Effects, Vol. 6, p. 129, 1988.
3. D. Spratt and M. Torrence, “Bipolar process vies with C-MOS in density and performance,” Electronics, p. 143, 1984.
4. R. A. Belt, D. F. Bemdt, and G. D. Harvey, “SEU-hardened bipolar flip-flops,” J. Rad. Effects, Vol. 6, p. 121, 1988.