Ion induced charge collection in GaAs MESFETs

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2292-2299

  Campbell, A ^a   Knudson, A ^a   McMorrow, D ^a   Anderson, W ^a   Roussos, J ^a   Espy, S ^b   Buchner, S ^b   Kang, K ^b   Kerns, D ^c   Kerns, S ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b LOCKHEED MARTIN   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; SEMICONDUCTING GALLIUM ARSENIDE;

CHARGE COLLECTION; CURRENT TRANSIENTS; MESFET; SINGLE EVENT UPSETS;

TRANSISTORS, FIELD EFFECT;

EID: 0024932013     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45438     Document Type: Article

References (22)

1. J. Blake & R. Mandel, “On-Orbit Observations of Single Event Upset in Harris HM-6508 1K RA.Ms,” IEEE Trans. Nucl. Sci. NS-33, 1616 (December 1986).
2. D. Nichols, L. Smith, W. Price, R. Koga, W. Kolasinski, “Recent Trends in Parts SEU Susceptibility from Heavy Ions,” IEEE Trans. Nucl. Sci. NS-34, 1332 (December 1987).
3. P. McNulty, A. Abdel-Kader, A. Campbell, A. Knudson, P. Shapiro, F. Eisen, & S. Roosild, “Charge Collection in GaAs Test Structures,” IEEE Trans. Nucl. Sci. NS-31, 1128 (December 1984).
4. S. Buchner, A. Knudson, K. Kang, & A. Campbell, “Charge Collection from Focussed Picosecond Laser Pulses,” IEEE Trans. Nucl. Sci. NS-35, 1517 (December 1988).
5. S. Buchner, D. Wilson, K. Kang, D. Gill, J. Mazer, W. Raburn, A. Campbell, & A. Knudson, “Laser Simulation of Single Event Upsets,” IEEE Trans. Nucl. Sci. NS-34, 1228 (December 1987).
6. R. Wagner, N. Bordes, J. Bradley, C. Maggiore, A. Knudson, & A. Campbell, “Alpha-, Boron-, Silicon- and Iron-Ion-Induced Current Transients in Low-Capacitance Silicon and GaAs Diodes,” IEEE Trans. Nucl. Sci. NS-35, (December 1988).
7. J. Fu, C. Axness, & H. Weaver, “Two-Dimensional Simulation of Single Event Upset Induced Bipolar Current in CMOS Structures,” IEEE Trans. Nucl. Sci. NS-31, 1155 (December 1984).
8. H. Grubin, J. Kreskovsky, & B. Weinberg, “Numerical Studies of Charge Collection and Funneling in Silicon Devices,” IEEE Trans. Nucl. Sci. NS-31, 1161 (December 1984).
9. S. Diehl, J. Vinson, B. Shafer, & T. Mnich, “Considerations For Single Event Upset Immune VLSI Logic,” IEEE Trans. Nucl. Sci. NS-30, 4501 (December 1983).
10. M. Pinto, C. Rafferty, H. Yeager, & R. Dutton, “PISCES-IIB Users Supplementary Report”, Stanford Electronics Laboratories, Stanford University, 1985 and M. Pinto, C. Rafferty, and R. Dutton, “PISCES-II Users's Manual,” Stanford Electronics Laboratories, Stanford University, 1984.
11. A. Knudson & A. Campbell, “Use of an Ion Microbeam to Study Single Event Upsets in Microcircuits,” IEEE Trans. Nucl. Sci. NS-28, 4017 (December 1981).
12. W.T. Anderson, Jr., M. Simons, E.E. King, H.B. Dietrich, and R.J. Lambert, “Long-Term Transient Radiation-Resistant GaAs FETs,” IEEE Electron Device Letters EDL-3, 248 (September 1982).
13. W.T. Anderson, M. Simons, and W.F. Tseng, “Long Term Transient Radiation Response of GaAs FETs Fabricated on an AlGaAs Buffer Layer,” IEEE Tans. Nucl. Sci. NS-33, 1442 (December 1986).
14. Y. Umemoto, N. Masuda, J. Shigeta, and K. Mitsusada, “Improvement of Alpha-Particle Induced Soft-Error Immunity in a GaAs SRAM by a Buried P-layer,” IEEE Trans. Elect. Dev. ED-35, 268 (March 1988).
15. M.A. Hopkins and J.R. Srour, “Charge Collection Measurements on GaAs Devices Fabricated on Semi-insulating Substrates,” IEEE Trans. Nucl. Sci. NS-31, 1116 (December, 1984).
16. W.T. Anderson, A.R. Knudson, F.A. Buot, H.L. Grubin, J.P. Kreskovsky, and A.B. Campbell, “Experimental and Theoretical Study of Alpha Particle Induced Charge Collection in GaAs FETs,” IEEE Trans. Nucl. Sci. NS-34, 1326 (December 1987).
17. Y. Umemoto, N. Matsunaga, and K. Mitsusada, “A Bipolar Mechanism for Alpha-Particle-Induced Soft Errors in GaAs Integrated Circuits, IEEE Trans. Elect. Dev. ED-36, 864 (May 1989).
18. L. Flesner, “Gate Charge Collection and Induced Drain Current in GaAs FETs,” IEEE Trans. Nucl. Sci. NS-32, 4110 (December, 1985).
19. G. Davis, L. Hite, T. Blake, C. Chen, H. Lam, & R. DeMoyer, “Transient Radiation Effects in SOI Memories,” IEEE Trans. Nucl. Sci. NS-32, 4432 (December, 1985).
20. S. Kerns, L. Massengill, D. Kerns, M. Alles, T. Houston, H. Lu, “SEU Models for CMOS/SOI,” to be presented at 1989 NSREC.
21. W. Stapor & P. McDonald, “Practical Approach to Ion Track Energy Distribution,” J. Appl. Phys. 64, 4430 (November 1988).
22. J. C. Gammel and J.M. Ballantyne, “Integrated Photoconductive Detector and Waveguide Structure,” Appl. Phys. Lett. 36, 149 (1980).