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Volumn 36, Issue 6, 1989, Pages 2362-2366

SEU measurements on HFETs and HFET SRAMs

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--RANDOM ACCESS; ELECTRON BEAMS; INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0024913732     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45449     Document Type: Article
Times cited : (8)

References (9)
  • 1
    • 34447345345 scopus 로고
    • Gate Charge Collection and Induced Drain Current in GaAs FETs
    • L. D. Flesner, “Gate Charge Collection and Induced Drain Current in GaAs FETs,” IEEE Trans. Nucl. Sci., Vol NS-32, No. 6, pp. 4110–4114, 1985.
    • (1985) IEEE Trans. Nucl. Sci , vol.NS-32 , Issue.6 , pp. 4110-4114
    • Flesner, L.D.1
  • 2
    • 84939738856 scopus 로고
    • Single Event Upset Study of GaAs FETs Using Alpha Particles and Electron Beam Pulses
    • Los Angeles, April 5–6
    • R. L. Remke, S. D. F. Jones, L. D. Flesner, and M. E. O'Brien, “Single Event Upset Study of GaAs FETs Using Alpha Particles and Electron Beam Pulses,” Single Event Effects Symposium, Los Angeles, April 5–6, 1988.
    • (1988) Single Event Effects Symposium
    • Remke, R.L.1    Jones, S.D.F.2    Flesner, L.D.3    O'Brien, M.E.4
  • 4
    • 0024175733 scopus 로고
    • Comparison of Heavy Ion and Electron-Beam Upset Data for GaAs SRAMS
    • Dec.
    • L. D. Flesner, R. Zuleeg, and W. A. Kolasinki, “Comparison of Heavy Ion and Electron-Beam Upset Data for GaAs SRAMS,” IEEE Trans. Nucl. Sci., Vol 35, No. 6, pp.1670-1672, Dec. 1988.
    • (1988) IEEE Trans. Nucl. Sci , vol.35 , Issue.6 , pp. 1670-1672
    • Flesner, L.D.1    Zuleeg, R.2    Kolasinki, W.A.3
  • 6
    • 0020126710 scopus 로고
    • High Speed Response of a GaAs Metal-Semiconductor Field-Effect Transistor to Electron-beam Excitation
    • May
    • L. D. Flesner, N. M. Davis and H. H. Wieder, “High Speed Response of a GaAs Metal-Semiconductor Field-Effect Transistor to Electron-beam Excitation,” J. Appl. Phys., Vol. 53, No. 5, pp. 3873–3877, May 1982.
    • (1982) J. Appl.Phys , vol.53 , Issue.5 , pp. 3873-3877
    • Flesner, L.D.1    Davis, N.M.2    Wieder, H.H.3
  • 7
    • 0024666348 scopus 로고
    • A Bipolar Mechanism for Alpha-Particle-Induced Soft Errors in GaAs Integrated Circuits
    • May
    • Y. Umemotto, N. Matunaga, and K. Mitsusada, “A Bipolar Mechanism for Alpha-Particle-Induced Soft Errors in GaAs Integrated Circuits,” Vol 36, No. 5, pp. 864–870, May, 1989.
    • (1989) , vol.36 , Issue.5 , pp. 864-870
    • Umemotto, Y.1    Matunaga, N.2    Mitsusada, K.3
  • 8
    • 1542585330 scopus 로고
    • GaAs Radiation Hardened Design Techniques
    • Nov.
    • F. Barber, “GaAs Radiation Hardened Design Techniques,” IEEE Proceedings, Vol. 76, No. 11, pp. 1501–1508, Nov. 1988.
    • (1988) IEEE Proceedings , vol.76 , Issue.11 , pp. 1501-1508
    • Barber, F.1
  • 9
    • 0020948470 scopus 로고
    • Suggested Single Event Upset Figure of Merit
    • Dec.
    • E. L. Petersen, J. B. Langworthy, and S. E. Diehl, “Suggested Single Event Upset Figure of Merit,” Vol. NS-30, No. 6, pp. 4533–4539, Dec. 1983.
    • (1983) , vol.NS-30 , Issue.6 , pp. 4533-4539
    • Petersen, E.L.1    Langworthy, J.B.2    Diehl, S.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.