Reduction of long-term transient radiation response in ion implanted GaAs fets

IEEE Transactions on Nuclear Science

Volumn 29, Issue 6, 1982, Pages 1533-1538

  Anderson, W T ^a   Simons, M ^a   King, E E ^b   Dietrich, H B ^b   Lambert, R J ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c RTI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0020271827     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1982.4336399     Document Type: Article

References (7)

1. M. Simons and E. E. King, “Long-Term Radiation Transients in GaAs FETs,” IEEE Trans. on Nucl. Sci. NS-26, pp. 5080-5086, Dec 1979.
2. M. Simons, E. E. King, W. T. Anderson, and H. M. Day, “Transient Radiation Study of GaAs Metal Semiconductor Field Effect Transistors Implanted in Cr-Doped and Undoped Substrates,” J. Appl. Phys. 52, pp. 6630-6636, Nov 1981.
3. T. Itoh and H. Yanai, “Long-Term Drift of GaAs MESFET Characteristics and its Dependence on Substrate with Buffer Layer,” in Gallium Arsenide and Related Compounds 1978, Institute of Physics Conference Series No. 45, Bristol: Institute of Physics, 1979, pp. 326-334.
4. T. Itoh and H. Yanai, “Stability of Performance and Interfacial Problems in GaAs MESFETs,” IEEE Trans. on Electron Devices, ED-27, pp. 1037-1045, 6 June 1980.
5. E. E. King, NRL Patent Disclosure No. 65,548, 15 Jan 1981.
6. T. Nozaki and K. Ohata, “SubMicron Gate GaAs MESFETs with Ion-Implanted Channels,” Proc. of the 8th Conf. (1976 International) on Solid-State Devices, Tokyo, 1976; Japan. J. Appl. Phys. 16, Suppl. 16-1, pp. 111-114, 1977.
7. A. G. Milnes, Deep Impurities in Semiconductors, New York: John Wiley & Sons, 1973.