Heavy Ion SEU Immunity of a GaAs Complementary HIGFET Circuit Fabricated on a Low Temperature Grown Buffer Layer

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1850-1855

  Marshall, Paul W ^a   Dale, Cheryl J ^b   Weatherford, Todd ^b   Carts, Martin ^b   McMorrow, Dale ^b   Peczalski, Andy ^c   Baier, Steve ^b   Nohava, James ^b   Skogen, John ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Honeywell Systems and Research Center ^*

^c HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLIP FLOP CIRCUITS; HETEROJUNCTIONS; IONS; LOW TEMPERATURE EFFECTS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SHIFT REGISTERS; SUBSTRATES;

SEMI INSULATING SUBSTRATES; SINGLE EVENT UPSET (EU); UPSET IMMUNITY;

FIELD EFFECT TRANSISTORS;

EID: 0029493359     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489226     Document Type: Article

References (20)

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19. Private communication with Michael La Macchia, Motorola, Inc.
20. Private communication with Joseph Melinger, Naval Research Laboratory.