Fast charge collection in GaAs MESFETs

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1902-1908

  McMorrow, Dale ^a   Knudson, Alvin R ^a   Campbell, Arthur B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; LASER PULSES; SEMICONDUCTING GALLIUM ARSENIDE;

CHARGE COLLECTION; PICOSECOND PULSES;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0025660891     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101207     Document Type: Article

References (14)

1. R.Wagner, N. Bordes, J. Bradley, C. Maggiore, A. Knudson, A. Campbell, “Alpha-, Boron-, Silicon-, and Iron-Ion-Induced Current Transients in Low-capacitance Silicon and GaAs Diodes”, IEEE Trans. Nuc. Sci. NS-35, 1578–1584 (1988).
2. P.J. McNulty, W. Abdel-Kader, A.B. Campbell, A.R. Knudson, P. Shapiro, R. Eisen and S. Roosild, “Charge Collection in GaAs Test Structures”, IEEE Trans. Nuc. Sci. NS-31, 1128–1131 (1984).
3. A. Campbell, A. Knudson, D. McMorrow, W. Anderson, J. Roussos, S. Espy, S. Buchner, K. Kang, D. Kerns, and S. Kerns, “Ion Induced Charge Collection in GaAs MESFETs”, IEEE Trans. Nuc. Sci. NS-36, 2292–2299 (1989).
4. T.R. Weatherford, J.R. Hauser, and S.E. Kerns, “Basic Mechanisms in GaAs SEU Response”, J. Rad. Effects, Res. & Engrg. 6, 56–62 (1988).
5. A.R. Knudson and A.B. Campbell, “Use of an Ion Microbeam to Study Single Event Upsets in Microcircuits”, IEEE Trans. Nuc. Sci. NS-28, 4017–4021 (1981).
6. W.J. Stapor and P.T. McDonald, “Pratical Approach to Ion Track Energy Distribution”, J. Appl. Phys. 64, 4430 (1988).
7. M.A. Xaspos, A.B. Campbell, A.R. Knudson, W.J. Stapor, P. Shapiro, T. Palmer, P.T. McDonald, and S.L. Swickert, “Charge Collection Efficiency Related to Damage in MOS Capacitors”, IEEE Trans. Nuc. Sci. NS-34, 1214–1219 (1987).
8. W.T. Anderson Jr., A.B. Campbell, A.R. Knudson, A. Christou, and B.R. Wilkins, “Degradation in GaAs FETs Resulting from Alpha Particle Irratiation”, IEEE Trans. Nuc. Sci. NS-31, 1124–1127 (1984).
9. R.A. Brown and J.J. Williams, “Ion Beam Damage Phenomena in GaAs”, in Proceedings of the 6th Australian Conference on Nuclear Techniques of Analysis, Lucas Heights, N.S. Wales, November, 1989, pp. 80–82.
10. P.R. Smith, D.H. Auston, A.M. Johnson, and W.M. Augustyniak, “Picosecond Photoconcudtivity in Radiation-Damaged Silicon-on-Sapphire Films”, Appl. Phys. Lett. 38, 47–50 (1981).
11. see also: Picosecond Optoelectronic Devices, edited by Chi H. Lee (Academic Press, New York, 1984).
12. S. Buchner, D. Wilson, K Kang, D. Gill, J. Mazer, W. Raburn, A. Campbell, and A. Knudson, “Laser Simulation of Single Event Upsets”, IEEE Trans. Nuc. Sci. NS-34, 1228–1233 (1987).
13. G.M. Martin, A. Mitonneau, and A. Mircea, “Electron Traps in Bulk and Epitazial GaAs Crystals”, Electron. Lett. 13, 191–193 (1977).
14. S. Sriram and M.B. Das, “Characterization of Electron Traps in Ion-Implanted GaAs MESFET's on Undoped and Cr-Doped LEC Semi-Insulating Substrates”, IEEE Trans. Elect. Dev. ED-30, 586–592 (1983).