Heavy ion and proton analysis of a GaAs c-higfet SRAM

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1660-1665

  Cutchin, J H ^a,c   Marshall, P W ^a,c   Weatherford, T R ^a,c   Langworthy, J ^a   Petersen, E L ^a   Campbell, A B ^a   Hanka, Steve ^b   Peczalski, Andy ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b HONEYWELL   (United States)

^c SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CELLULAR ARRAYS; DOSIMETRY; ELECTRON SCATTERING; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; INTERFACES (MATERIALS); IONS; PROBABILITY; PROTONS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE;

COMPLEMENTARY HETEROSTRUCTURE INSULATED GATE FET; DISPLACEMENT DAMAGE; HEAVY ION; LINEAR ENERGY TRANSFER; SINGLE EVENT UPSET; STATIC RANDOM ACCESS STORAGE;

RANDOM ACCESS STORAGE;

EID: 0027810881     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273495     Document Type: Article

References (7)

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