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Applied Physics Letters
Volumn 57, Issue 15, 1990, Pages 1531-1533
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
(5)
Melloch, M R
a
Otsuka, N
a
Woodall, J M
b
Warren, A C
b
Freeouf, J L
b
a
PURDUE UNIVERSITY
(
United States
)
b
IBM RESEARCH
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
0001155241
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.103343
Document Type
:
Article
Times cited : (
214
)
References (
15
)
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University of Colorado at Boulder.
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46th Device Research Conference, June 20‐22
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7
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8
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San Francisco, CA, April 20
(1990)
Workshop on Low Temperature GaAs Buffer Layers
Melloch, M.R.
1
7
84950573891
San Francisco, CA, April 20
(1990)
Workshop on Low Temperature GaAs Buffer Layers
Liliental‐Weber, Z.
1
8
84950573890
San Francisco, CA, April 20
(1990)
Workshop on Low Temperature GaAs Buffer Layers
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1
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(1990)
Appl. Phys. Lett.
, vol.57
, pp. 1331
Warren, A.C.
1
Woodall, J.M.
2
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3
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4
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5
Melloch, M.R.
6
Otsuka, N.
7
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
