New MBE Buffer Used to Eliminate Backgating in GaAs MESFET's

IEEE Electron Device Letters

Volumn 9, Issue 2, 1988, Pages 77-80

  Smith, F W ^a   Calawa, A R ^a   Chen, Chang Lee ^a   Manfra, M J ^a   Mahoney, L J ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE - GROWTH;

BUFFER LAYERS; METAL SEMICONDUCTOR FET (MESFET);

TRANSISTORS, FIELD EFFECT;

EID: 0023965427     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.2046     Document Type: Article

References (12)

1. J. Barrera, “The importance of substrate properties on GaAs FET performance”, in Proc. IEEE/Cornell Conf. on High Speed Semiconductor Devices and Circuits (Ithaca. NY), 1975, pp. 135-144.
2. L. F. Eastman and M. S. Shur, “Substrate current in GaAs MESFET's”, IEEE Trans. Electron Devices, vol. ED-26, pp. 1359-1361, 1979.
3. T. Nozaki, M. Ogawa. H. Terao, and H. Watanabe, “Multilayer epitaxial technology for the Schottky barrier GaAs field effect transistor”, Inst. Phys. Conf., Ser. No. 24, pp. 46-54, 1975.
4. H. Goronkin, M. S. Birrittella. W. C. Seclbach, and R. L. Vaitkus, “Backgating and light sensitivity in ion-implanted GaAs integrated circuits”, IEEE Trans. Electron Devices, vol. ED-29, pp. 845-850, 1982.
5. T. H. Miers, W. M. Paulson, and M. S. Birrittella, “The influence of material parameters on backgating in GaAs integrated circuits”, Inst. Phys. Conf., Ser. No. 65, pp. 339-346. 1982.
6. C. Kocot and C. A. Stolte, “Backgating in GaAs MESFET's”, IEEE Trans. Electron Devices, vol. ED-29, pp. 1059 1064, 1982.
7. C. P. Lee. S. J. Lee. and B. M. Welch, “Carrier injection and backgating effect in GaAs MESFET's”, IEEE Electron Device Lett., vol. EDL-3, pp. 97-98, 1982.
8. W. J. Schaff, L. F. Eastman, B. Van Rees. and B. Liles, “Superlatticc buffers for GaAs power MESFET's grown by MBE.” J. Vac. Sci. Technol. B., vol. 2, pp. 265-268, 1984.
9. F. W. Smith, A. R. Calawa, C. L. Chen, M. I. Manfra, and L. J. Mahoney, “New MBE buffer used to eliminate backgating in GaAs MESFETs”, presented at the 45th Annual Device Research Conf., Santa Barbara, CA, June 22-24, 1987.
10. G. Metze and A. R. Calawa, “Effects of very low growth rates on GaAs grown by molecular beam epitaxy at low substrate temperatures”, Appl. Phys. Lett., vol. 42, pp. 818-820, 1983.
11. R. A. Stall, C. E. C. Wood, P. D. Kirchner, and E. F. Eastman, “Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs”, Electron. Lett., vol. 16, pp. 171-172, 1980.
12. T. Murotani, T. Shimanoe, and S. Mitsui. “Growth temperature dependence in molecular beam epitaxy of gallium arsenide”, J. Cryst. Growth, vol. 45, pp. 302-308, 1978.