Comparisons of Single Event Vulnerability of GaAs SRAMS

IEEE Transactions on Nuclear Science

Volumn 33, Issue 6, 1986, Pages 1590-1596

  Weatherford, T R ^a   Hauser, J R ^a   Diehl, S E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939047672     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334647     Document Type: Article

References (15)

1. J.M. Golio, J.R. Hauser, and P.A. Blakey, “A Large-Signal GaAs MESFET Model Implemented on SPICE”, IEEE Circuits and Devices, Sept. 1985, 1, 21.
2. A.T. Brown, S.E. Diehl, and J.R. Hauser,“Simulation of Transient Radiation Effects in GaAs Static RAM cells”
3. T.R. Weatherford, J.R. Hauser, S.E. Diehl-Nagle,“A Study of Single Events in GaAs SRAMs”, IEEE Trans. Nuc. Sci., 32, 4170 (1985).
4. R. Zuleeg, J.K. Notthoff, and D.K. Nichols,“SEU of Complementary GaAs Static RAMs Due to Heavy Ions”, IEEE Trans. Nuc. Sci. 31, 1121 (1984).
5. L.D. Flesner,“Gate Charge Collection and Induced Drain Current in GaAs FETs”, IEEE Trans. Nuc.Sci. 32, 4110 (1985).
6. S.E. Diehl, A. Ochoa Jr., P.V. Dressendorfer, R. Koga, W.A. Kolasinski, “Error Analysis and Prevention of Cosmic Ion-Induced Soft Errors in Static CMOS RAMs”, IEEE Trans. Nuc. Sci. 29, 2032 (1982).
7. Z. Shanfield, M.M. Moriwaki, W.M. Digby, J.R. Srour, and D.E. Campbell, “Characteristics of SEU Current Transients and Collected Charge in GaAs and Si Devices”, IEEE Trans. Nuc. Sci. 32, 4104 (1985).
8. M.A. Hopkins and J.R. Srour,“Charge Collection Measurements on GaAs Devices Fabricated on Semi-Insulating Substrates”, IEEE Trans. Nuc. Sci. 31, 1116 (1984).
9. P.J. McNulty, W. Abdel-Kader, A.B. Campbell, A.R. Knudson, P. Shapiro, F. Eisen, and S. Roosild,“Charge Collection in GaAs Test Structures”, IEEE Trans. Nuc. Sci. 31, 1128 (1984).
10. E.L. Petersen, J.B. Langworthy and S.E. Diehl,“Suggested Single Event Upset Figure of Merit”, IEEE Trans. Nuc. Sci. 30, 4533 (1983).
11. “Complementary GaAs Logic,” Final Technical Report, Jan. 1985, McDonnell Douglas Astronautics Co.
12. “GaAs Memory Technology Development,” Final Report, April 1985, Texas Instruments Inc.
13. “Low Power Radiation Hard GaAs RAM,” Semi-Annual Technical Report, August 1983, Rockwell International.
14. R. Zuleeg, “GaAs JFET Memory Technology”, 3rd Annual DARPA/DSO GaAs Technology Contract Review, April 30 - May 2, 1985.
15. S.E. Diehl,“Approaches to Single Event Hardening”, 4th Annual SEU Symposium, March 4, 1986.