A Comparison of charge collection effects between GaAs MESFETs and III-V HFETs

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 1642-1646

  Hughlock, B ^a   Johnston, A ^a   Williams, T ^a   Harrang, J ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542795442     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211347     Document Type: Article

References (15)

1. M. A. Hopkins and J. R. Srour, “Charge Collection Measurements on GaAs Devices Fabricated on Semi-Insulating Substrates,” IEEE Trans. Nucl. Sci., NS-31, pp 1116–1120, 1984.
2. T. R. Weatherford, J. R. Hauser, and S. E. Diehl, “Comparisons of Single Event Vulnerability of GaAs SRAMS,” IEEE Trans. Nucl. Sci., NS-33, pp 1590–1596, 1986.
3. L. Petersen, J. B. Langworthy and S. E. Diehl, “Suggested Single Event Upset Figure of Merit,” IEEE Trans. Nucl. Sci., NS-30, pp 4533–4539, 1983.
4. P. McNulty, A. Abdel-Kader, A. Campbell, A. Knudson, P. Shapiro, F. Eisen and S. Roosild, “Charge Collection in GaAs Test Structures,” IEEE Trans. Nucl. Sci., NS-31, pp 1128–1131, 1984.
5. L. Flesner, “Gate Charge Collection and Induced Drain Current in GaAs FETs,” IEEE Trans. Nuc. Sci., NS-32, pp 4110–4114, 1985.
6. Y. Umemoto, N. Masuda, and K. Mitsusada, “Effects of a Buried P-Layer on Alpha-Particle Immunity of MESFEETs Fabricated on Semi-Insulating GaAs Substrates, IEEE Elect. Dev. Lett., EDL-7, pp 396–397, 1986.
7. W. Anderson, A Knudson F. Buot, H. Grubin, J. Kreskovsky and A. Campbell, “Experimental and Theoretical Study of Alpha Particle Induced Charge Collection in GaAs FETs,” IEEE Trans. Nuc. Sci., NS-34, pp 1326–1331, 1987.
8. Y. Umemoto, N. Masude, J. Shigeta, and K. Matsusade, “Improvement of Alpha-Particle-Induced Soft-Error Immunity in a GaAs SRAM by a Buried p-layer,” IEEE Trans. Elect. Dev., ED-35, pp 268–273, 1988.
9. Y. Umemoto, N. Matsumaga and K. Mitsusada, “A Bipolar Mechanism for Alpha-Particle-Induced Soft Errors in GaAs Integrated Circuits,” IEEE Trans. Elect. Dev., ED-36, pp 864, 1989.
10. A. Campbell, A. Knudson, D. McMorrow, W. Anderson, J. Roussos, S. Espy, S. Buchner, K. Kang, D. Kerns and S. Kerns, “Ion Induced Charge Collection in GaAs MESFETs,” IEEE Trans. Nuc. Sci., NS-36, pp 2292–2299, 1989.
11. B. Hughlock, G. LaRue, and A. Johnston, “Single-Event Upset in GaAs E/D MESFET Logic,” IEEE Trans. Nuc. Sci., NS-37, pp 1894–1901, 1990
12. J. Salzman, P. McNulty and A. Knudson, “Intrinsic SEU Reduction From Use of Heterojunctions in Gallium Arsenide Bipolar Circuits,” IEEE Trans. Nuc. Sci., NS-34, pp 1676–1679, 1987.
13. B. Hughlock, T. Williams, A. Johnston, and R. Plaag, “Ion Induced Charge Collection in GaAs MESFETs and Their Effects on SEU Vulnerability,” IEEE Trans. Nuc. Sci., NS-38, 1442–1449, 1991.
14. D. McMorrow, A. Knudson, and A. Campbell, Fast Charge Collection in GaAs MESFETs,” IEEE Trans. Nuc. Sci., NS-37, pp 1902–1908, 1990.
15. A. Knudson, A. Campbell, D. McMorrow, S. Buchner, K. Kang, T. Weatherford, V. Srinivas, G. Swartzlander Jr., and Y. Chen, “Pulsed Laser-Induced Charge Collection in GaAs MESFETs,” IEEE Trans. Nuc. Sci., NS-37, pp 1909–1915, 1990.