Optical Gain and Large-Signal Characteristics of Illuminated GaAs MESFET's

IEEE Journal of Quantum Electronics

Volumn 23, Issue 7, 1987, Pages 1160-1171

  Darling, Robert B ^a   Uyemura, John P ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS, GAS; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE - OPTICAL PROPERTIES;

ILLUMINATED GAAS MESFET; LARGE-SIGNAL CHARACTERISTICS; METAL SEMICONDUCTOR FET (MESFET); OPTICAL GAIN;

TRANSISTORS, FIELD EFFECT;

EID: 0023384324     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1987.1073485     Document Type: Article

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