SCOPUS 정보 검색 플랫폼

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 664-681

Progress and continuing challenges in GaSb-based III-V alloys and heterostructures grown by organometallic vapor-phase epitaxy

(1) Wang, C A a

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

A3. Organometallic vapor phase epitaxy; B1. AlGaAsSb; B1. Antimonides; B1. GaInAsSb; B1. GaSb

Indexed keywords

ANTIMONY ALLOYS; CURRENT DENSITY; DESORPTION; GALLIUM ALLOYS; HETEROJUNCTIONS; METALLIZING; MOLECULAR BEAM EPITAXY; ORGANOMETALLICS; PHOTONS; QUANTUM EFFICIENCY; REDUCTION; STOICHIOMETRY; STRAIN; SURFACE ACTIVE AGENTS; VAPOR PRESSURE;

ALGAASSB; ANTIMONIDES; GAINASSB; GASB; ORGANOMETALLIC VAPOR-PHASE EPITAXY;

GALLIUM COMPOUNDS;

EID: 9944231362 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.019 Document Type: Conference Paper

Times cited : (52)

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