InAsSb-based mid-infrared lasers (3.8-3.9 μm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 69, Issue 4, 1996, Pages 465-467

  Allerman, A A ^a   Biefeld, R M ^a   Kurtz, S R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAMS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SURFACES; X RAY CRYSTALLOGRAPHY;

ALUMINUM ARSENIC ANTIMONIDE; ELECTRON HOLE PAIRS; ELECTRON INJECTION; INDIUM ARSENIC ANTIMONIDE; OPTICAL CONFINEMENT; TWO COLOR EMISSION;

SEMICONDUCTOR LASERS;

EID: 0030195953     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118141     Document Type: Article

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