Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSB/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices

Materials Research Society Symposium - Proceedings

Volumn 763, Issue , 2003, Pages 315-322

  Wang, C A ^a   Shiau, D A ^a   Connors, M K ^a   Danielson, L R ^b   Nichols, G ^b   Donetsky, D ^c   Anikeev, S ^c   Belenky, G ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b LOCKHEED MARTIN   (United States)

^c STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HETEROJUNCTIONS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; SURFACE CHEMISTRY; X RAY DIFFRACTION ANALYSIS;

THERMOPHOTOVOLTAIC (TPV) DEVICES;

GALLIUM ALLOYS;

EID: 0345359160     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-763-b8.4     Document Type: Conference Paper

References (17)

1. G.W. Charache, J.L. Egley, D.M. DePoy, L.R. Danielson, M.J. Freeman, R.J. Dziendziel, J.F. Moynihan, P.F. Baldasaro, B.C. Campbell, C.A. Wang, H.K. Choi, G.W. Turner, S.J. Wojtczuk, P. Colter, P. Sharps, M. Timmons, R.E. Fahey, K. Zhang, J. Electron. Mater. 27, 1038-1042 (1998).
2. H.K. Choi, C.A. Wang, G.W. Turner, M.J. Manfra, D.L. Spears, G.W. Charache, L.R. Danielson, D.M. DePoy, Appl. Phys. Lett. 71, 3758-3760 (1997).
3. C.A. Wang, H.K. Choi, D.C. Oakley, G.W. Charache, J. Cryst. Growth 195, 346-355 (1998).
4. G.W. Charache, P.F. Baldasaro, L.R. Danielson, D.M. DePoy, M.J. Freeman, C.A. Wang, H.K. Choi, D.Z. Garbuzov, R.U. Martinelli, V. Khalfin, S. Saroop, J.M. Borrego, R.J. Gutman, J. Appl. Phys. 85, 2247-2252 (1999).
5. C.A. Wang, H.K. Choi, G.W. Charache, IEE Proc.-Optoelectron. 147, 193-198 (2000).
6. J.G. Cederberg, M.J. Hafich, R.M. Biefeld, M. Palmisiano, J. Cryst. Growth 248, 289-295 (2003).
7. C.A. Wang, C.J. Vineis, H.K. Choi, M.K. Connors, R.K. Huang, L.R. Danielson, G. Nichols, G.W. Charache, D. Donetsky, S. Anikeev, G. Belenky, AIP Conf. Proc. 653, 324-334 (2003).
8. Z.A. Shellenbarger, G. C. Taylor, R. K. Smeltzer, J.L. Li, R. U. Martinelli, K. Palit, AIP Conf. Proc. 653, 314-323 (2003).
9. M.N. Palmisiano, R.M. Biefeld, J.G. Cederberg, M.J. Hafich, G.M. Peake, AIP Conf. Proc. 653, 305-313 (2003).
10. D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, C.A. Wang, G. Nichols, Appl. Phys. Lett. 81, 4769-4771 (2002).
11. M.J. Cherng, H.R. Jen, C.A. Larsen, G.B. Stringfellow, H. Lundt, P.C. Taylor, J.Cryst. Growth 77, 408 (1986).
12. C.A. Wang, D.R. Calawa, and C.J. Vineis, J. Electron. Mater. 30, 1392-1396 (2001).
13. C.A. Wang, J. Cryst. Growth 170, 725-731 (1997).
14. G.R. Booker, P.C. Klipstein, M. Lakrimi, S. Lyapin, N.J. Mason, R.J. Nicholas, T.-Y. Seong, D.M. Symons, T.A. Vaughan, P.J. Walker, J. Cryst. Growth 145, 778-785 (1994).
15. R.M. Biefeld and S.R. Kurtz, Mat. Res. Soc. Symp. Proc. Vol. 379, 283-288 (1995).
16. C.J. Vineis, C.A. Wang, K.F. Jensen, W.G. Breiland, J. Cryst. Growth 195, 181-186 (1998).
17. C.A. Wang, J. Cryst. Growth 191, 631-640 (1998).