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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 385-390

p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy

(6) Ehsani, H a Bhat, I a Hitchcock, C a Gutmann, R J a Charache, G b Freeman, M b

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b LOCKHEED MARTIN (United States)

Author keywords

Doping; GaSb; Hall measurements; IR materials; MOVPE

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON; TELLURIUM;

INFRARED MATERIALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477212 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00710-6 Document Type: Article

Times cited : (23)

References (14)

1
- 0029483778
- D.H. Chow, R.H. Miles, T.C. Hasenberg, A.R. Kost, Y.H. Zhang, H.L. Dunlap, L. West, Appl. Phys. Lett. 67 (1995) 3700.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 3700
- Chow, D.H.¹ Miles, R.H.² Hasenberg, T.C.³ Kost, A.R.⁴ Zhang, Y.H.⁵ Dunlap, H.L.⁶ West, L.⁷

2
- 0037713792
- C. Hitchcock, H. Ehsani, M. Freeman, I. Bhat, G. Charache, J. Boreggo, R.J. Gutmann, AIP Conf. Proc. 401 (1997) 89.
- (1997) AIP Conf. Proc. , vol.401 , pp. 89
- Hitchcock, C.¹ Ehsani, H.² Freeman, M.³ Bhat, I.⁴ Charache, G.⁵ Boreggo, J.⁶ Gutmann, R.J.⁷

3
- 0018492292
- J.P. Duchemin, M. Bonnet, F. Koelsech, D. Huyghe, J. Electrochem. Soc. 126 (1979) 1134.
- (1979) J. Electrochem. Soc. , vol.126 , pp. 1134
- Duchemin, J.P.¹ Bonnet, M.² Koelsech, F.³ Huyghe, D.⁴

4
- 0003666012
- Wiley, New York
- S.K. Ghandhi, VLSI Fabrication Principles, Wiley, New York, 1994.
- (1994) VLSI Fabrication Principles
- Ghandhi, S.K.¹

5
- 0007751576
- K.F. Longenbach, S. Xin, I. Wang, J. Appl. Phys. 69 (1991) 3393.
- (1991) J. Appl. Phys. , vol.69 , pp. 3393
- Longenbach, K.F.¹ Xin, S.² Wang, I.³

6
- 0000172316
- T.M. Rossi, D.A. Collins, D.H. Chow, T.C. McGill, Appl. Phys. Lett. 57 (1990) 2256.
- (1990) Appl. Phys. Lett. , vol.57 , pp. 2256
- Rossi, T.M.¹ Collins, D.A.² Chow, D.H.³ McGill, T.C.⁴

7
- 0001179444
- H. Ehsani, I. Bhat, R. Gutmann, G. Charache, Appl. Phys. Lett. 69 (1996) 3863.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 3863
- Ehsani, H.¹ Bhat, I.² Gutmann, R.³ Charache, G.⁴

8
- 24244432597
- H. Gotoh, K. Sasamoto, S. Kuroda, T. Yamamoto, K. Tamamura, M. Fukushima, M. Kimata, Jpn. J. Appl. Phys. 20 (1981) L893.
- (1981) Jpn. J. Appl. Phys. , vol.20
- Gotoh, H.¹ Sasamoto, K.² Kuroda, S.³ Yamamoto, T.⁴ Tamamura, K.⁵ Fukushima, M.⁶ Kimata, M.⁷

9
- 0346790422
- T.D. McLean, T.M. Kerr, D.I. Westwood, C.E. Wood, D.F. Howell, J. Vac. Sci. Technol. B 4 (1986) 601.
- (1986) J. Vac. Sci. Technol. B , vol.4 , pp. 601
- McLean, T.D.¹ Kerr, T.M.² Westwood, D.I.³ Wood, C.E.⁴ Howell, D.F.⁵

10
- 51249171384
- S. Subbanna, G. Tuttle, H. Kroemer, J. Electron. Mater. 17 (1988) 297.
- (1988) J. Electron. Mater. , vol.17 , pp. 297
- Subbanna, S.¹ Tuttle, G.² Kroemer, H.³

11
- 0030180670
- A.N. Danilewsky, S. Lauer, J. Meinhardt, K.W. Benz, B. Kaufmann, R. Hofmann, Dornen, J. Electron. Mater. 25 (1996) 1082.
- (1996) J. Electron. Mater. , vol.25 , pp. 1082
- Danilewsky, A.N.¹ Lauer, S.² Meinhardt, J.³ Benz, K.W.⁴ Kaufmann, B.⁵ Hofmann, R.⁶ Dornen⁷

12
- 0000406205
- G.W. Turner, S.J. Eglash, A.J. Strauss, J. Vac. Sci. Technol. B 11 (1993) 864.
- (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 864
- Turner, G.W.¹ Eglash, S.J.² Strauss, A.J.³

13
- 0025387973
- F. Pascal, F. Delannoy, J. Bougnot, G. Bougnot, P. Grosse, J. Kaoukab, J. Electron. Mater. 18 (1990) 187.
- (1990) J. Electron. Mater. , vol.18 , pp. 187
- Pascal, F.¹ Delannoy, F.² Bougnot, J.³ Bougnot, G.⁴ Grosse, P.⁵ Kaoukab, J.⁶

14
- 0346790421
- R.N. Zitter, A.J. Strauss, A.E. Attard, Phys. Rev. 115 (1959) 226.
- (1959) Phys. Rev. , vol.115 , pp. 226
- Zitter, R.N.¹ Strauss, A.J.² Attard, A.E.³

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