Recombination parameters for antimonide-based semiconductors using the radio frequency photoreflectance technique

Journal of Electronic Materials

Volumn 33, Issue 2, 2004, Pages 94-100

  Kumar, R J ^a   Gutmann, R J ^a   Borrego, J M ^a   Dutta, P S ^a   Wang, C A ^b   Martinelli, R U ^c   Nichols, G ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c SARNOFF CORPORATION   (United States)

^d LOCKHEED MARTIN   (United States)

Author keywords

Antimonide materials; Auger and radiative recombination parameters; Bulk lifetime and surface recombination velocity; Non contacting characterization

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL GROWTH; LIGHT REFLECTION; MATHEMATICAL MODELS; OPTICAL VARIABLES MEASUREMENT;

AUGER RECOMBINATION; RADIATIVE RECOMBINATION; SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTING ANTIMONY COMPOUNDS;

EID: 1542306662     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0276-6     Document Type: Article

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