Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 77, Issue 6, 2000, Pages 842-844

  Yi, S S ^a   Hansen, D M ^a   Inoki, C K ^b   Harris, D L ^b   Kuan, T S ^b   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000374326     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1306919     Document Type: Article

References (14)

1. E. Veuhoff, J. Cryst. Growth 195, 444 (1998).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwase, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. U. Kozaki, H. M. Sano, and K. Chocho, J. Cryst. Growth 189, 820 (1998).
3. P. S. Dutta, H. L. Bhat, and V. Kumar, J. Appl. Phys. 81, 5821 (1997).
4. R. M. Graham, A. C. Jones, N. J. Mason, S. Rushworth, L. Smith, and P. J. Walker, J. Cryst. Growth 145, 363 (1994).
5. F. Royo, A. Giani, F. Pascal-Delannoy, L. Gouskov, J. P. Malzac, and J. Camassel, Mater. Sci. Eng., B 28, 169 (1994).
6. X. F. Liu, H. Asahi, Y. Okuno, K. Inoue, and S. Gonda, Jpn. J. Appl. Phys., Part 2 32, L703 (1993).
7. X. F. Liu, H. Asahi, Y. Okuno, D. Marx, K. Inoue, and S. Gonda, J. Cryst. Growth 136, 250 (1994).
8. D. Marx, K. Miyamoto, H. Asahi, X. F. Liu, A. B. Villaflor, K. Miki, S. Gonda, S. Shimomura, and S. Hyamizu, J. Cryst. Growth 150, 874 (1995).
9. J. S. Foord, F. P. Howard, and G. J. Davies, J. Cryst. Growth 188, 159 (1998).
10. H. Asai, J. Cryst. Growth 80, 425 (1987).
11. E. Yamaichi, T. Ueda, Q. Gao, C. Yamagishi, and M. Akiyama, Jpn. J. Appl. Phys., Part 2 33, L1442 (1994).
12. Z. R. Zylkiewicz, J. Domagala, D. Dobosz, and J. Bak-Misiuk, J. Appl. Phys. 86, 1965 (1999).
13. J. M. Kang, S. K. Min, and A. Rocher, Appl. Phys. Lett. 65, 2954 (1994).
14. J. Kim, T. Seong, N. J. Mason, and P. J. Walker, J. Electron. Mater. 27, 466 (1998).