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Volumn 70, Issue 7, 1997, Pages 802-804

GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION;

EID: 0031077576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118227     Document Type: Article
Times cited : (26)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.