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Volumn 70, Issue 7, 1997, Pages 802-804
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GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CURRENT DENSITY;
INTERFACES (MATERIALS);
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLITHOGRAPHY;
PHOTOLUMINESCENCE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
X RAY DIFFRACTION;
ALUMINUM GALLIUM ARSENIC ANTIMONIDE;
GALLIUM INDIUM ARSENIC ANTIMONIDE;
QUANTUM WELL LASERS;
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EID: 0031077576
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.118227 Document Type: Article |
Times cited : (26)
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References (14)
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