The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 289-295

  Cederberg, J G ^a   Hafich, M J ^a   Biefeld, R M ^a   Palmisiano, M ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b BECHTEL BETTIS INC   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Antimonides; B2. Semiconducting aluminum compounds; B2. Semiconducting indium compounds; B2. Semiconducting quaternary compounds

Indexed keywords

PHOTOVOLTAIC EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES;

THERMOPHOTOVOLTAIC APPLICATIONS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0037291774     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01927-9     Document Type: Conference Paper

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