Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 346-355

  Wang, C A ^a   Choi, H K ^a   Oakley, D C ^a   Charache, G W ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b LOCKHEED MARTIN   (United States)

Author keywords

GaInAsSb; Mid infrared; OMVPE; Thermophotovoltaics

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

THERMOPHOTOVOLTAICS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477208     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00597-1     Document Type: Article

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