Low pressure metalorganic vapor phase epitaxy and characterization of ( Al,Ga) Sb/GaSb heterostructures

Journal of Crystal Growth

Volumn 167, Issue 3-4, 1996, Pages 415-420

  Beheta, M ^a   Schneider, P ^a   Moulin, D ^a   Heime, K ^a   Woitok, J ^a   Tummler J ^a   Hermans, J ^a   Geurts, J ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; PRESSURE EFFECTS; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; X RAY DIFFRACTION;

DIRECT INDIRECT CROSSOVER CONCENTRATION; OPTICAL QUALITY;

HETEROJUNCTIONS;

EID: 0030259569     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00260-6     Document Type: Article

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