The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 384-390

  Biefeld, R M ^a   Cederberg, J G ^a   Peake, G M ^a   Kurtz, S R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Antimonides; B2. Semiconducting aluminum compounds; B2. Semiconducting indium compounds; B2. Semiconducting quaternary compounds

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; THERMAL EFFECTS;

SEMICONDUCTING QUATERNARY COMPOUNDS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0035333412     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00886-7     Document Type: Conference Paper

References (8)