MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 450-455

  Giesen, Ch ^a   Szymakowski, A ^a   Rushworth, S ^b   Heuken, M ^a,c   Heime, K ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b Epichem Ltd   (United Kingdom)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

ALUMINUM GALLIUM ARSENIC ANTIMONY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034497167     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00739-9     Document Type: Article

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