In situ monitored MOVPE growth of undoped and p-doped GaSb(1 0 0)

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 289-293

  Kollonitsch, Z ^a   Moller K ^a   Schimper, H J ^a   Giesen, Ch ^b   Heuken, M ^b   Willig, F ^a   Hannappel, T ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

A1. Doping; A1. Reflectance difference spectroscopy; A1. Surface reconstruction; A3. Metalorganic chemical vapor deposition; B1. Antimonides; B2. Semiconducting III V materials

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; FILM GROWTH; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; VIDEO CAMERAS;

DEOXIDATION; REFLECTANCE DIFFERENCE SPECTROSCOPY; VACUUM CHAMBERS;

GALLIUM COMPOUNDS;

EID: 0346308579     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.019     Document Type: Conference Paper

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