Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 372-378

  Wang, C A ^a   Shiau, D A ^a   Calawa, D R ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A1. Roughening; A1. Surfaces; A3. Organometallic vapor phase epitaxy; B2. GaInAsSb; B2. InAsSb; B3. Solar cells

Indexed keywords

ADHESIVES; ARSENIC COMPOUNDS; ATOMIC FORCE MICROSCOPY; DIELECTRIC DEVICES; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SOLAR CELLS;

EPITAXIAL TRANSFER; OPTICAL QUALITY; ROUGHENING; WAFER BONDING;

HETEROJUNCTIONS;

EID: 0347415797     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.030     Document Type: Conference Paper

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