Doping of InAs, GaSb and InPSb by low pressure MOVPE

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 783-787

  Von Eichel Streiber, C ^a   Behet, M ^a,b   Heuken, M ^a   Heime, K ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; HYDROGEN SULFIDE; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM ANTIMONIDE; INDIUM ARSENIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030704941     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00530-1     Document Type: Article

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