SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 30, Issue 11, 2001, Pages 1392-1396

Effect of substrate orientation on phase separation in epitaxial GaInAsSb

(3) Wang, C A a Calawa, D R a Vineis, C J a

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

GaInAsSb; OMVPE; Phase separation; Substrate misorientation

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MODULATION; PHASE SEPARATION; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATE ORIENTATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035516625 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0189-6 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.