N-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapor phase epitaxy

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 400-402

  Wang, C A ^a   Jensen, K F ^a   Jones, A C ^a   Choi, H K ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; ORGANOMETALLICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SURFACES;

ALUMINUM GALLIUM ANTIMONIDE; CROSSHATCHING; GALLIUM ANTIMONIDE; LATTICE MISMATCH; MOLE FRACTION; TRIETHYLGALLIUM; TRIETHYLTELLURIUM; TRIMETHYLANTIMONY; TRITERTIARY BUTYLALUMINUM;

QUANTUM WELL LASERS;

EID: 0029732759     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116698     Document Type: Article

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