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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 181-186

In situ monitoring of GaSb, GaInAsSb, and AlGaAsSb

(4) Vineis, C J a,b Wang, C A a Jensen, K F b Breiland, W G c

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

b Massachusetts Institute of Technology Cambridge (United States)

c SANDIA NATIONAL LABORATORIES (United States)

Author keywords

AlGaAsSb; GaInAsSb; GaSb; In situ reflectance monitoring; OMVPE; Organometallic vapor phase epitaxy

Indexed keywords

CRYSTAL LATTICES; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTODETECTORS; PHOTODIODES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

VIRTUAL INTERFACE MODELS;

SEMICONDUCTOR GROWTH;

EID: 0032477234 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00699-X Document Type: Article

Times cited : (17)

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